buy silicon material

A) Solar grade polycrystalline silicon     

1. Base description : Si 6N (99.9999%)

2. Boron doped : ≤ 0.20ppba

3. P.phosphorus doped:   ≤ 0.90 ppba

4. Metal doped:  ≤ 30.00 ppba

5. Metal surfce doped:  ≤ 30.00 ppba

6. Length : 15-250 mm

7. Type:   P type  

8. Resistivity:>0.50 ohm.cm

B) Broken IC grade silicon wafer without metal diffusions in wafers.

1.  Base description : Si 6N(99.9999℅)                                  

2.  Size: Diameter >= 50 mm                                

3.  Thickness: > 400 μm                                   

4.  More than 90% of wafers are P type, Resistivity: >0.50 ohm.cm.                       

5.  Less than 10% of wafers are N type,Resistivity: >1.0 ohm.cm.

6.  Less than 5% of wafers are with film and patterns

C) IC grade top and tail                     

1. Base description : Si 6N (99.9999℅),

2. Washing-free is the better

3. Type: P-type resitivity > 0.5 ohm. cm  N-type resitivity>10 ohm. Cm

4. Without infusible substances and air bubbles

 D. Solar cell (mono or poly crystalline) 

  1. Bare without pattern

  2. Thickness: > 200 μm

  3. Size: Diameter >= 50 mm                 

  4. Type: P type          

  5. Resistivity: >0.50 ohm.cm 

E)  IC grade whole wafers(size 6，12 & 8. inches) without metal diffusions in wafers.

1.  Si > 6N (99.9999℅).   

2.  More than 90% of wafers are P type, 

Resistivity: >0.50 ohm.cm.

3.  Less than 10% of wafers are N type, 

Resistivity: >1.0 ohm.cm.

4.  Less than 5% of wafers are with film, coating and patterns on wafers.       

5.  Thickness: over 400 μm.