Polycrystalline Silicon Ingot

Polycrystalline Silicon - also referred to as "polysilicon" or "Poly-Si" is a material consisting of multiple small silicon crystals and has long been used as the conducting gate material in MOSFET and CMOS processing technologies. For these technologies, Polycrystalline Silicon is deposited using LPCVD reactors at high temperatures and is usually heavily n or p-doped.